A STUDY OF MILLIMETER-WAVE GAAS IMPATT OSCILLATOR AND AMPLIFIER NOISEWELLER KP.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 6; PP. 517-521; BIBL. 23 REF.Serial Issue

COUPLED TEM MICROSTRIP IMPEDANCE TRANSFORMER FOR S-BAND TRAPATT AMPLIFIERSSINHA SK; WELLER KP.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 2; PP. 119-125; BIBL. 8 REF.Article

NOISE PERFORMANCE OF A 94-GHZ GUNN-EFFECT LOCAL OSCILLATORTULLY JW; WELLER KP; BENKO E et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 1; PP. 64-65; BIBL. 8 REF.Article

MILLIMETER IMPATT SOURCES FOT THE 130-170-GHZ RANGE.WELLER KP; YING RS; LEE DH et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 11; PP. 738-743; BIBL. 10 REF.Article

ION-IMPLANTED PLANAR-MESA IMPATT DIODES FOR MILLIMETER WAVELENGTHSLEE DH; WELLER KP; THROWER WF et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 714-722; BIBL. 16 REF.Article

CIRCUIT CHARACTERIZATION OF V-BAND IMPATT OSCILLATORS AND AMPLIFIERS.FONG TT; WELLER KP; ENGLISH DL et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 11; PP. 752-758; BIBL. 15 REF.Article

MULTILAYER VAPOR-PHASE EPITAXIAL SILICON MILLIMETER-WAVE IMPATT DIODESWEN CP; WELLER KP; YOUNG AF et al.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 7; PP. 891-893; BIBL. 10 REF.Serial Issue

MILLIMETER-WAVE PULSED IMPATT DIODE OSCILLATORS.YING RS; ENGLISH DL; WELLER KP et al.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 279-285; BIBL. 10 REF.Article

Y-BAND (170-260 GHZ) TUNABLE CW IMPATT DIODE OSCILLATORS.CHAO C; BERNICK RL; NAKAJI EM et al.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 12; PP. 985-991; BIBL. 22 REF.; (ACCENT ON APPL. INT. MICROWAVE SYMP.; SAN DIEGO, CALIF.; 1977)Conference Paper